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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT 23 KTC4075 FEATURES TRANSISTOR NPN (c) 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.1 W Tamb=25ae(c) Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J T stg: -55aeto +150ae Unit : mm ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless Test otherwise conditions specified(c) MIN 60 50 5 0.1 0.1 70 700 0.25 80 V MHz MAX UNIT V V V |I A |I A IC = 100 |I A IE=0 IC = 1mAIB=0 IE= 100|I AIC=0 VCB=60 V, IE=0 VEB=5V, IC=0 VCE= 6VIC=2mA IC=100mA, IB= 10mA VCE=10V, I = 1mA C fT Cob NF VCE=10VIE=0 f=1MHz VCE=6 V=0.1mA, f=1KHz G=10K? IE R 3.5 10 dB dB Noise figure CLASSIFICATION OF h FE Rank Range Marking O 70~140 LO Y 120~240 LY GR 200~400 LGR BL 350~700 LBL SOT-23 PACKAGE OUTLINE DIMENSIONS D b |E 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 |
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